5? features operating temperature range, ?5 c to +125 c current transfer ratio guaranteed from ?5 c to +100 c ambient temperature range high current transfer ratio at low input cur- rent isolation test voltage, 3000 vdc base lead available for transistor biasing standard 8 pin dip package description the ILH100 is designed especially for hi-rel applica- tions requiring optical isolation with high current transfer ratio and low saturation vce. each opto- coupler consists of a light emitting diode and a npn silicon phototransistor mounted and coupled in an 8 pin hermetically sealed dip package. the ILH100's low input current makes it well suited for direct cmos to lsttl/ttl interfaces. maximum ratings emitter reverse voltage ................................................................................6.0 v forward current ..............................................................................60 ma peak forward current (1) ...................................................................... 1 a power dissipation.........................................................................150 mw derate linearly from 25 c ........................................................1.5 mw/ c detector collector?mitter voltage ...................................................................70 v emitter?ase voltage ...........................................................................7 v collector?ase voltage .....................................................................70 v continuous collector current ..........................................................50 ma power dissipation.........................................................................300 mw derate linearly from 25 c ........................................................3.0 mw/ c package input?utput isolation test voltage (2) ..................................... 3000 vdc storage temperature range ..........................................?5 c to +150 c operating temperature range..........................................?5 to +125 c junction temperature...................................................................... 150 c soldering time at 240 c, 1.6 mm from case ................................ 10 sec. power dissipation.........................................................................350 mw derate linearly from 25 c ........................................................3.5 mw/ c notes: 1. values applies for p w 1 ms, prr?00 pps. 2. measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together. t a =25 c and duration=1 second, rh=45%. dimensions in inches (mm) .390 .005 1 2 3 4 8 7 6 5 siemens xxx xxxx xxyy .320 (8.13) max. .125 (3.18) min. .018 .002 (.46 .05) .100 .010 (2.54 .25) .020 (.51) min. .150 (3.81) max. .010 .002 (.25 .05) .300 (7.62) typ. (9.91 .13) cathode anode base 7 collect or emitter 6 5 3 2 ILH100 hermetic ph ototransistor optocoupler
5? ILH100 characteristics (t a =25 c, unless otherwise speci?d) typical switching speeds (t a =25 c) parameter symbol min. typ. max. unit condition emitter forward voltage v f 1.45 1.7 v i f =60 ma reverse breakdown voltage v br 6vi r =10 m a reverse current i r 0.01 10 m av r =6 v capacitance c j 20 pf v f =0 v, f=1 mhz thermal resistance r th 220 c/w junction to lead detector collector-emitter saturation voltage v ce(sat) 0.25 0.4 v i b =20 m a, i ce =1 ma base-emitter voltage v be 0.65 v i b =20 m a collector-emitter leakage current i ceo 550nav ce =10 v dc forward current gain hfe 250 400 750 v ce =10 v, i b =20 m a saturated dc forward gain hfe (sat) 125 200 325 v ce =0.4 v, i b =20 m a capacitance c ce c cb c eb 6.8 8.5 11 pf pf pf v ce =5 v, f=1 mhz thermal resistance r th 220 c/w junction to lead coupled characteristics (-55 c to 100 c) saturated current transfer ratio ctr (sat) 70 210 250 % i f =10 ma v ce =0.4 v current transfer ratio, collector-emitter cte ce 100 300 450 % i f =10 ma, v ce =10 v current transfer ratio, collector-base ctr cb 0.4 0.7 0.9 % i f =10 ma, v cb =9.3 v isolation and insulation common mode rejection output high cm h 1000 2000 v/ m sv cm =500 v p-p , v cc =5 v, r l =1 k w , i f =0 ma common mode rejection output high cm l 1000 2000 v/ m sv cm =500 v p-p , v cc =5 v, r l =1 k w , i f =10 ma package capacitance c io 1.5 pf v io =0 v, 1 mhz insulation resistance r io 10 11 10 14 w v io =500 vdc leakage current, input-output i io 10 m a relative humidity 50%, v io 3000 vdc, 5 sec. non-saturated switching symbol typ. max. unit test condition delay td 0.8 2 m s rise tr 2 5 m sv cc =5 v storage ts 0.4 1.5 m sr l =75 w fall tf 2 5 m si f =10 ma propagation-high to low tphl 1 3 m s 50% of v pp propagation-low to high tplh 1.5 4 m sr be =open saturated switching (1) delay td 0.7 2 m sv ce =0.4 v rise tr 1 3 m sv ce =0.4 v storage ts 13.5 30 m sr l =1 k w fall tf 12 30 m si f =10 ma propagation-high to low tphl 1.4 5 m sv cc =5 v, v th =1.5 v propagation-low to high tplh 15 40 m sr be =open
5? ILH100 figure 4. normalized non-saturated current transfer ratio versus temperature and led current figure 5. normalized saturated current transfer ratio versus temperature and led current figure 6. normalized saturated current transfer ratio versus temperature and led current figure 7. collector-emitter current versus temperature and led current 125 100 75 50 25 0 -25 -50 0.2 0.4 0.6 0.8 1.0 1.2 .5 ma 1 ma 5 m a 10 m a ta - ambient temperature - c nctrce - normalized ctr normalized to: ta = 25 c vce = 10v, if = 10 ma 125 100 75 50 25 0 -25 -50 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 m a 20 ma 30 ma 60 ma ta - ambient temperature - c nctrce - normalized ctr normalized to: ta = 25 c vce = 10v, if = 10 ma vce = 10 v 125 100 75 50 25 0 -25 -50 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.5 ma 1 ma 5 ma 10 ma ta - ambient temperature - c nctrce(sat) - normalized saturated ctr normalized to ta =25 c vce = 10 v, if = 10 ma vce = 0.4 v 125 100 75 50 25 0 -25 -50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 m a 20 m a 30 ma 60 m a ta - ambient temperature - c nctr(sat)- normalized saturated ctr normalized to: ta = 25 c vce = 10 v , if = 10 ma vce = 0.4 v figure 1. switching time waveform and test schematic non-saturated test condition figure 2. forward current versus forward voltage and temperature figure 3. peak led current versus duty factor refresh rate and temperature v out t r 90% t f 10% i nput i f 0 pulse width=100 m s duty cycle=1 % v cc 100 w v out i f r l 1.8 1.6 1.4 1.2 1.0 0.8 .1 1 10 100 -55 c -25 c 0 c 25 c 85 c 125 c vf - forward voltage - v if - forward current - ma 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 df - duty factor - % if(pk) - peak led current - a 10khz 1khz 100 hz 10khz 1khz 100hz 60 ma 25 c 125 c tj(max) = 150 c
5? ILH100 figure 12. normalized collector base crt versus temper- ature and led current figure 13. normalizied icb photocurrent versus tempera- ture and led current figure 14. normalized non-saturated and saturated hfe at t a =25 c versus base current figure 15. normalizied non-saturated and saturated hfe at t a =50 c versus base current 100 10 1 .1 0.0 0.5 1.0 1.5 -55 c -25 c 0 c 25 c 85 c 125 c if - led current - ma nctrcb - normalized ctrcb normalized to: if = 10ma, ta =25 c vcb = 9.3v 100 10 1 .1 .001 .01 .1 1 10 if - led current - ma nicb - normalized photocurrent normalized to: if = 10 ma, ta = 25 c vcb = 9.3v -55 c -25 c 0 c 25 c 85 c 125 c if - led current - ma hfe at ta 25 c versus base current ib - base current - m a 1000 100 10 1 0.0 0.5 1.0 1.5 nhfe nhfe(sat) normalized to: ib = 20 m a, vce=10v ta=25 c vce = 0.4v vce = 10v nhfe - normalized hfe 1000 100 10 1 0.0 0.5 1.0 1.5 ib - base current - m a nhfe nhfe - normalized hfe nhfe(sat) vce = 0.4v vce = 10v normalized to: ib = 20 m a, vce=10v ta=25 c figure 8. collector-emitter current versus temperature and led current figure 9. collector-emitter current versus temperature and led current figure 10. saturated collector-emitter current versus temperature and led current figure 11. saturated collector-emitter current versus temperature and led current 125 100 75 50 25 0 -25 -50 .1 1 10 100 0.5 ma 1 ma 5 ma 10 m a ta - ambient temperature - c ice - collector current - ma vce = 10 v 125 100 75 50 25 0 -25 -50 0 50 100 150 200 60 ma 30 ma 20 ma 10 ma ta - ambient temperature - c ice - collector current - ma vce = 10 v 125 100 75 50 25 0 -25 -50 .1 1 10 100 0.5 ma 1 m a 5 m a 10 m a 20 m a 30 m a 60 ma ta - ambient temperature - c ice - collector current - ma vce = 0.4 v 125 100 75 50 25 0 -25 -50 .1 1 10 100 0.5 ma 1 ma 5 ma 10 ma ta - ambient temperature - c ice - collector current - ma vce = 0.4 v
5? ILH100 figure 20. propagation delay versus temperatureand collector load resistance for i f =5 ma figure 21. propagation delay versus temperatureand collector load resistance for i f =10 ma figure 22. propagation delay versus temperatureand collector load resistance for i f =20 ma figure 23. propagation delay versus temperatureand collector load resistance for i f =5 ma 125 100 75 50 25 0 -25 -50 1 10 100 100 0 47k w tphl 47k w tplh 10k w tphl 10k w tplh 2.2k w tphl 2.2k w tplh ta - ambient temperature - c propagation delay - m s vcc = 5.25v, rbe = open, vth = 1.5 v 125 100 75 50 25 0 -25 -50 1 10 100 100 0 47k w tphl 47k w tplh 10k w tphl 10k w tplh 2.2k w tphl 2.2k w tplh ta - ambient temperature - c propagation delay - m s vcc = 5.25v, rbe = open, vth = 1.5 v 125 100 75 50 25 0 -25 -50 1 10 100 100 0 47k w tphl 47k w tplh 10k w tphl 10k w tplh 2.2k w tphl 2.2k w tplh ta - ambient temperature - c propagation delay - m s vcc = 5.25v, rbe = open, vth = 1.5 v 125 100 75 50 25 0 -25 -50 0 5 10 15 20 25 30 47k w tphl 47k w tplh 10k w tphl 10k w tplh 2.2k w tphl 2.2k w tplh ta - ambient temperature - c propagation delay - m s vcc = 5.25v, rbe = 47k w , vth = 1.5 v figure 16. normalized non-saturated and saturated hfe at t a =70 c versus base current figure 17. collector-emitter leakage current versus temperature figure 18. base emitter voltage versus base current figure 19. base emitter capacitance versus base emitter voltage 1000 100 10 1 0.0 0.5 1.0 1.5 ib - base current - m a nhfe nhfe(sat) normalized to: ib = 20 m a, vce=10v ta=25 c vce = 0.4v vce = 10v nhfe - normalized hfe 100 80 60 40 20 0 -20 10 10 10 10 10 10 10 10 -2 -1 0 1 2 3 4 5 ta - ambient temperature - c iceo - collector-emitter - na worst case typical vce = 10v ta - ambient temperature - c 0.8 0.7 0.6 0.5 0.4 .001 .01 .1 1 10 100 1000 g vbe - base emitter voltage - v ib - base current - m a ta = 25 c 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 1000 10000 vbe - base emitter voltage - v cbe -base emitter capacitance - pf base-emitter capacitance versus base-emitter voltage
5? ilh200 figure 27. propagation delay versus collector load and base-emitter resistance for i f =5 ma figure 28. propagation delay versus collector load and base-emitter resistance for i f =5 ma figure 29. propagation delay versus collector load and base-emitter resistance for i f =10 ma figure 30. propagation delay versus collector load and base-emitter resistance for i f =10 ma 100000 1000 0 1000 100 1 10 100 1000 open(tphl) open(tplh) 1m w (tphl) 1m w (tplh) 470k(tphl) 470k(tplh) 100k w (tphl) 100k w (tplh) rl - collector load resistor - w propagation delay - m s base-emitter resistor ta = 25 c if = 5 ma vcc = 5.25v vth = 1.5v 100000 10000 1000 100 0 5 10 15 20 rl - collector load resistor - w propagation delay - m s 82k w (tphl) 82k w (tplh) 47k w (tphl) 47k w (tplh) 33k w (tphl) 33k w (tplh) 22k w (tphl) 22k w (tplh) base-emitter resistor ta = 25 c if = 5 ma vcc = 5.25v vth = 1.5v rl - collector load resistor - w 1000 00 10000 1 000 100 1 10 10 0 10 00 o pen (tph l) o pen (tpl h) 1m w (t phl) 1m w (t plh) 4 70k(t phl) 4 70k(t plh) 1 00k w (t ph l) 1 00k w (tpl h) 82k w (tphl ) 82k w (t plh ) rl - colle ctor load resistor - w propagation del ay - m s ta = 2 5 c if = 10 m a vcc = 5.25 v vth = 1 .5 v base-emi tter resistor 100000 10000 1000 100 0 5 10 15 47k w (tphl) 47k w (tplh) 33k w (tphl) 33k w (tplh) 22k w (tphl) 22k w (tplh) 15k w (tphl) 15k w (tphl) 10k w (tphl) 10k w (tplh) rl - collector load resistor - w propagation delay - m s base-emitter resistor ta = 25 c if = 10 ma vcc = 5.25 v vth = 1.5 v figure 24. switching time waveform and test schematic saturated test condition figure 25. propagation delay versus temperature and col- lector load resistance for i f =10 ma figure 26. propagation delay versus temperature and collector load resistance for i f =20 ma i f v o v th =1.5 v t phl t plh r l v o v cc r be 125 100 75 50 25 0 -25 -50 0 5 10 15 20 25 30 47k w tphl 10k w tphl 10k w tplh 2.2k w tphl 2.2k w tplh ta - ambient temperature - c propagation delay - m s vcc = 5.25, rbe = 47k w vth = 1.5v 47k w tplh 125 100 75 50 25 0 -25 -50 0 5 10 15 20 25 30 35 47k w tphl 10k w tphl 10k w tplh 2.2k w tphl 2.2k w tplh ta - ambient temperature - c propagation delay - m s vcc = 5.25v, rbe = 47k w vth = 1.5 v 47k w tplh
5? ILH100 figure 34. propagation delay versus collector load and base-emitter resistance for i f =15 ma figure 35. common mode transient rejection 100000 10000 1000 100 .1 1 10 100 1000 open(tphl) open(tplh) 1m w (tphl) 1m w (tplh) 470k w (tphl) 470k w (tplh) 100k w (tphl) 100k w (tplh) 82k w (tphl) 82k w (tplh) rl - collector load resistor - w propagation delay - m s ta = 25 c if = 20 ma vcc = 5.25v vth = 1.5 v 2200 2000 1800 1600 1400 1200 1000 0 5000 10000 15000 20000 25000 vcm - common mode voltage - v rate of common mode voltage change - v/ m s ta = 25 c, vcc = 5.0v if(l) = 10 ma, rl = 1k w if(h) = 0 ma cmr-h cmr-l figure 31. propagation delay versus collector load and base-emitter resistance for i f =15 ma figure 32. propagation delay versus collector load and base-emitter resistance for i f =15 ma figure 33. propagation delay versus collector load and base-emitter resistance for i f =15 ma 100000 10000 1000 100 .1 1 10 100 1000 open(tphl) open(tplh) 1m w (tphl) 1m w (tplh) 470k w (tphl) 470k w (tplh) 100k w (tphl) 100k w (tplh) 82k w (tphl) 82k w (tplh) rl - collector load resistor - w propagation delay - m s ta = 25 c if = 15 ma vcc = 5.25 v vth = 1.5 v base-emitter resistor 100000 10000 1000 100 0 5 10 15 47k w (tphl) 47k w (tplh) 33k w (tphl) 33k w (tplh) 22k w (tphl) 22k w (tplh) 15k w (tphl) 15k w (tplh) 10k w (tphl) 10k w (tplh) 8.2k w (tphl) 8.2k w (tplh) rl - collector load resistor - w propagation delay - m s base-emitter emitter ta = 25 c if = 15 ma vcc = 5.25v vth = 1.5 v 100000 10000 1000 100 0 5 10 15 20 47k w (tphl) 47k w (tplh) 33k w (tphl) 33k w (tplh) 22k w (tphl) 22k w (tplh) 15k w (tphl) 15k w (tplh) 10k w (tphl) 10k w (tplh) 8.2k w (tphl) 8.2k w (tplh) rl - collector load resistor - w propagation delay - m s ta = 25 c if = 20 ma vcc = 5.25v vth = 1.5 v
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